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revisions ltr description date (yr-mo-da) approved d add vendor cage f8859. add device class v criteria. editorial changes throughout. - jak 99-11-05 monica l. poelking e correct data limits in paragraph 1.3 and i in test conditions in table i. add case outline x. add t able iii, delta limits. edit orial changes th roughout. - jak 00-06-21 monica l. poelking f correct table ii. update boilerplate to mil-prf-38535 requirements. ? jak 02-02-08 thomas m. hess current cage code 67268 rev sheet rev f f sheet 15 16 rev status rev f f f f f f f f f f f f f f of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by greg a. pitz defense supply center columbus standard microcircuit drawing checked by d. a. dicenzo columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all departments approved by robert p. evans microcircuit, digital, high-speed cmos, octal transparent d-type latches with three- state outputs, monolithic silicon and agencies of the department of defense drawing approval date 84-10-17 amsc n/a revision level f size a cage code 14933 84072 sheet 1 of 16 dscc form 2233 apr 97 5962-e206-02 distribution statement a . approved for public release; distribution is unlimited.
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class leve ls consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outli nes and lead finishes are available and are reflected in the par t or identifying number (pin). when available, a choice of radiat ion hardness assurance (rha) leve ls are reflected in the pin. 1.2 pin . the pin is as shown in the following examples. 84072 01 r x drawing number device type case outline lead finish (see 1.2.2) (see 1.2.4) (see 1.2.5) for device class v: 5962 - 84072 01 v x x federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices m eet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device cl ass m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 54hc373 octal transparent d-type latches with three-state outputs 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as listed below. since the device class designator has been added after the original issuance of this drawing, device classes m and q designators will not be included in the pin and will not be marked on the device. device class device requirements documentation m vendor self-certification to the r equirements for mil-std-883 compliant, non-jan class level b microcircuits in a ccordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1.2.4 case outline(s) . the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style r gdip1-t20 or cdip2-t20 20 dual-in-line s gdfp2-f20 or cdfp3-f20 20 flat pack x see figure 1 20 flat pack 2 cqcc1-n20 20 square leadless chip carrier
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 3 dscc form 2234 apr 97 1.2.5 lead finish . the lead finish is as specified in mil-prf- 38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 1.3 absolute maximum ratings . 1 / 2 / 3 / supply voltage range (v cc ).................................................................................. -0.5 v dc to +7.0 v dc dc input voltage range (v in )................................................................................ -0.5 v dc to v cc +0.5 v dc dc output voltage range (v out )........................................................................... -0.5 v dc to v cc +0.5 v dc input clamp current (i ik ) (v in < 0.0 or v in > v cc ) .................................................. 20 ma output clamp current (i ok ) (v out < 0.0 or v out > v cc )......................................... 20 ma continuous output current (i out ) (v out = 0.0 to v cc ) ........................................... 35 ma continuous current through v cc or gnd ............................................................. 70 ma storage temperature range (t stg )....................................................................... -65 c to +150 c maximum power dissipation (p d ):........................................................................ 500 mw 4 / lead temperature (solderi ng, 10 seconds ).......................................................... +260 c thermal resistance, junction-to-case ( jc ) .......................................................... see mil-std-1835 junction temperature (t j ) .................................................................................... +175 c 5 / 1.4 recommended operating conditions . 2 / 3 / supply voltage range (v cc ).................................................................................. +2.0 v dc to +6.0 v dc case operating temperature range (t c ) ............................................................. -55 c to +125 c input rise or fall time t r , t f ): vcc = 2.0 v ...................................................................................................... 0 to 1,000 ns vcc = 4.5 v ...................................................................................................... 0 to 500 n s vcc = 6.0 v ...................................................................................................... 0 to 400 n s minimum setup time, data before le (t s ): t c = +25 c: v cc = 2.0 v ........................................................................................................ 100 ns v cc = 4.5 v ........................................................................................................ 20 ns v cc = 6.0 v ........................................................................................................ 17 ns t c = -55 c to +125 c: v cc = 2.0 v ........................................................................................................ 150 ns v cc = 4.5 v ........................................................................................................ 30 ns v cc = 6.0 v ........................................................................................................ 26 ns 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2 / unless otherwise noted, all voltages are referenced to gnd. 3 / the limits for the parameters specified herein shall apply over the full specified v cc range and case temperature range of -55 c to +125 c. 4 / for t c = +100 c to +125 c, derate linearly at 12 mw/ c. 5 / maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of mil-std-883.
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 4 dscc form 2234 apr 97 minimum hold time, data after le (t h ): t c = +25 c: v cc = 2.0 v ........................................................................................................ 50 ns v cc = 4.5 v ........................................................................................................ 10 ns v cc = 6.0 v ........................................................................................................ 10 ns t c = -55 c to +125 c: v cc = 2.0 v ........................................................................................................ 75 ns v cc = 4.5 v ........................................................................................................ 15 ns v cc = 6.0 v ........................................................................................................ 13 ns minimum pulse width le high (t w ): t c = +25 c: v cc = 2.0 v ........................................................................................................ 100 ns v cc = 4.5 v ........................................................................................................ 20 ns v cc = 6.0 v ........................................................................................................ 17 ns t c = -55 c to +125 c: v cc = 2.0 v ........................................................................................................ 150 ns v cc = 4.5 v ........................................................................................................ 30 ns v cc = 6.0 v ........................................................................................................ 26 ns 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the i ssues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard electronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specificat ion, standards, and handbooks are ava ilable from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this document, how ever, supersedes applicable laws and regulations unless a specific exemption has been obtained.
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 5 dscc form 2234 apr 97 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.2 design, construction, and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines . the case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 terminal connections . the terminal connections sha ll be as specified on figure 2. 3.2.3 truth table . the truth table shall be as specified on figure 3. 3.2.4 logic diagram . the logic diagram shall be as specified on figure 4. 3.2.5 switching waveforms and test circuit . the switching waveforms and test circuit shall be as specified in figure 5. 3.3 electrical performanc e characteristics and postirr adiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as s pecified in table i and shall apply over th e full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in t able ii. the electrical tests for each subgroup are defined in table i. 3.5 marking . the part shall be marked with the pin listed in 1.2 her ein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for pa ckages where marking of the entire smd pi n number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classe s q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to t he requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to ds cc-va prior to listing as an approv ed source of supply for this drawing shall affirm that the manufactu rer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the require ments of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided wi th each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable r equired documentation. offshor e documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 36 (see mil-prf-38535, appendix a).
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 6 dscc form 2234 apr 97 table i. electrical per formance characteristics . test symbol test conditions 1 / -55 c t c +125 c group a subgroups limits unit unless otherwise specified min max v cc = 2.0 v 1.9 v cc = 4.5 v 4.4 v in = v ih minimum or v il maximum i oh = -20 a v cc = 6.0 v 1, 2, 3 5.9 1 3.98 v in = v ih minimum or v il maximum i oh = -6.0 ma v cc = 4.5 v 2, 3 3.7 1 5.48 high level output voltage v oh v in = v ih minimum or v il maximum i oh = -7.8 ma v cc = 6.0 v 2, 3 5.2 v v cc = 2.0 v 0.1 v cc = 4.5 v 0.1 v in = v ih minimum or v il maximum i ol = +20 a v cc = 6.0 v 1, 2, 3 0.1 1 0.26 v in = v ih minimum or v il maximum i ol = +6.0 ma v cc = 4.5 v 2, 3 0.40 1 0.26 low level output voltage v ol v in = v ih minimum or v il maximum i ol = +7.8 ma v cc = 6.0 v 2, 3 0.40 v v cc = 2.0 v 1.5 v cc = 4.5 v 3.15 high level input voltage v ih 2 / v cc = 6.0 v 1, 2, 3 4.2 v v cc = 2.0 v 0.3 v cc = 4.5 v 0.9 low level input voltage v il 2 / v cc = 6.0 v 1, 2, 3 1.2 v input capacitance c in v in = 0.0 v, t c = +25 c, v cc = 2.0 v to 6.0 v, see 4.4.1c 4 10.0 pf 1 8.0 quiescent supply current i cc v in = v cc or gnd v cc = 6.0 v i out = 0.0 a 2, 3 160.0 a 1 100.0 input leakage current i in v in = v cc or gnd v cc = 6.0 v 2, 3 1000.0 na 1 0.5 three-state output leakage current i oz v cc = 6.0 v, v in = v ih or v il v out = v cc or gnd 2, 3 10.0 a see footnotes at end of table.
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 7 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol test conditions 1 / -55 c t c +125 c group a subgroups limits unit unless otherwise specified min max power dissipation capacitance c pd see 4.4.1c 4 100.0 pf functional tests see 4.4.1b 7, 8 v cc = 2.0 v 150 v cc = 4.5 v 30 t c = +25 c c l = 50 pf see figure 4 v cc = 6.0 v 9 26 ns v cc = 2.0 v 225 v cc = 4.5 v 45 propagation delay time, data to output, dn to qn t phl1 , t plh1 3 / t c = -55 c and +125 c c l = 50 pf see figure 4 v cc = 6.0 v 10, 11 38 ns v cc = 2.0 v 175 v cc = 4.5 v 35 t c = +25 c c l = 50 pf see figure 4 v cc = 6.0 v 9 30 ns v cc = 2.0 v 265 v cc = 4.5 v 53 propagation delay time, latch enable to any output, le to qn t phl2 , t plh2 3 / t c = -55 c and +125 c c l = 50 pf see figure 4 v cc = 6.0 v 10, 11 45 ns v cc = 2.0 v 150 v cc = 4.5 v 30 t c = +25 c c l = 50 pf see figure 4 v cc = 6.0 v 9 26 ns v cc = 2.0 v 225 v cc = 4.5 v 45 propagation delay time, output enable to any output, oe to qn t pzh , t pzl 3 / t c = -55 c and +125 c c l = 50 pf see figure 4 v cc = 6.0 v 10, 11 38 ns see footnotes at end of table
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 8 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol test conditions 1 / -55 c t c +125 c group a subgroups limits unit unless otherwise specified min max v cc = 2.0 v 150 v cc = 4.5 v 30 t c = +25 c c l = 50 pf see figure 4 v cc = 6.0 v 9 26 ns v cc = 2.0 v 225 v cc = 4.5 v 45 propagation delay time, output disable to any output, oe to qn t phz , t plz 3 / t c = -55 c and +125 c c l = 50 pf see figure 4 v cc = 6.0 v 10, 11 38 ns v cc = 2.0 v 60 v cc = 4.5 v 12 t c = +25 c c l = 50 pf see figure 4 v cc = 6.0 v 9 10 ns v cc = 2.0 v 90 v cc = 4.5 v 18 transition time, output rise and fall t thl , t tlh 4 / t c = -55 c and +125 c c l = 50 pf see figure 4 v cc = 6.0 v 10, 11 15 ns 1 / for a power supply of 5 v 10 % , the worst case output voltages (v oh and v ol ) occur for hc at 4.5 v. thus, the 4.5 v values should be used when designi ng with this supply. worst cases v ih and v il occur at v cc = 5.5 v and 4.5 v respectively. (the v ih value at 5.5 v is 3.85 v.) the worst case leakage currents (i in , i cc , and i oz ) occur for cmos at the higher voltage, so the 6.0 v val ues should be used. powe r dissipation capacitance (c pd ), typically 100 pf per latch, determines the no load dynamic power consumption, p d = c pd v cc 2 f + i cc v cc , and the no load dynamic current consumption, i s = c pd v cc f + i cc . 2 / the v ih and v il tests are not required because they are used as forcing functions for v oh or v ol . 3 / ac testing at v cc = 2.0 v and v cc = 6.0 v shall be guaranteed, if not tested, to the specified limits in table i. 4 / transition time (t tlh , t thl ), if not tested, shall be guaranteed to the specified limits in table i.
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 9 dscc form 2234 apr 97 case outline x device type 01, case outline x symbol inches millimeters min nom max min nom max a .045 .085 1.14 2.16 b .015 .019 0.38 0.48 c .003 .006 0.076 0.152 d .505 .515 12.83 13.08 e .275 .285 6.99 7.24 e 0.045 0.055 1.14 1.40 l .250 .370 6.35 9.39 q .010 0.25 n 20 20 figure 1. case outlines .
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 10 dscc form 2234 apr 97 device type 01 case outline r, s, x, and 2 terminal number terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 oe q0 d0 d1 q1 q2 d2 d3 q3 gnd le q4 d4 d5 q5 q6 d6 d7 q7 v cc figure 2. terminal connections . inputs outputs oe le dn qn l l l h h h l x h l x x h l q0 z h = high voltage level. l = low voltage level. x = irrelevant. z = high impedance. q0 = the level of output before the steady -state input conditions were established. figure 3. truth table .
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 11 dscc form 2234 apr 97 figure 4. logic diagram .
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 12 dscc form 2234 apr 97 notes: 1. t plh and t phl : s1 and s2 = open t tlh and t thl : s1 and s2 = open t pzh and t plz : s1 = open and s2 = closed t pzl and t plz : s2 = closed and s2 = open 2. r l = 1 k ? . 3. c l = 50 pf (includes probe and test fixture capacitance). 4 the t pzl and t plz reference waveform is for the output under test with internal conditions such that the output is at v ol except when disabled by the output enable control. the t pzh and t phz reference waveform is for the output under test with internal conditions such that the output is at v oh except when disabled by the output enable control. 5. phase relationships between waveforms were chosen arbitrarily. all input pul ses are supplied by generators having the following characteristics: prr 1 mhz, z o = 50 ? , t r = 6.0 ns, t f = 6.0 ns. 6. the outputs are measured one at a time with one input transition per measurement. figure 5. switching waveforms and test circuit .
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 13 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's qua lity management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conform ance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conduct ed on all devices prior to qua lity conformance inspection. 4.2.1 additional criteria for device class m . a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and pow er dissipation, as applicable, in acco rdance with the intent specified in test method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameter s shall be as specified in table ii herein. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condi tion and test temperature, or approved alte rnatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf- 38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer's te chnology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameter s shall be as specified in table ii herein. c. additional screening for device class v beyond the require ments of device class q shall be as specified in mil-prf-38535, appendix b. 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be perform ed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspec tions (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for cl asses q and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified herein. qualit y conformance inspection for device class m shall be in accordance with mil-prf-38535, appendi x a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mi l-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection a. tests shall be as specified in table ii herein. b. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 3 herein. the test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. all possible input to output logic patterns per function shall be guaranteed, if not te sted, to the truth table in figure 3, herein. for device classes q and v, subgroups 7 and 8 shall include verifying the functionality of the device.
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 14 dscc form 2234 apr 97 c. c in shall be measured only for initial qualification and after process or design changes whic h may affect capacitance. c in shall be measured between the designated term inal and gnd at a frequency of 1 mhz. c pd shall be tested in accordance with the latest revision of je dec standard no. 20 and table i herein. for c in and c pd , test all applicable pins on five devices with zero failures. table ii. electrical test requirements . test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) - - - - - - 1 final electrical parameters (see 4.2) 1, 2, 3, 7, 9 1 / 1 / 1, 2, 3, 7, 9 2 / 3 / 1, 2, 3, 7, 8, 9, 10, 11 group a test requirements (see 4.4) 1, 2, 3, 4, 7, 9, 10, 11 2 / 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 group c end-point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 3 / 1, 2, 3, 7,8, 9, 10, 11 group d end-point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 1, 2, 3 group e end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1 / pda applies to subgroup 1. 2 / pda applies to subgroups 1, 7 and deltas. 3 / delta limits as specified in table iii shall be requir ed where specified and the delta limits shall be completed with reference to the zero hour electrical parameters. table iii. burn-in and operating life test delta parameters (+25 c) parameter symbol delta limits quiescent current i cc 120 na input current low level i il 20 na input current high level i ih 20 na output voltage low level (i ol = 6 ma, v cc = 4.5 v) v ol 0.026 v output voltage high level (i oh = -6 ma, v cc = 4.5 v) v oh 0.20 v
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 15 dscc form 2234 apr 97 4.4.2 group c inspection . the group c inspection end-point electrical param eters shall be as specified in table ii herein. 4.4.2.1 additional criteria for device class m . steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiri ng activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level cont rol by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or prepar ing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end-point electrical param eters shall be as specified in table ii herein. 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. end-point electrical parameters shall be as specified in table ii herein. b. for device classes q and v, the devices or test vehicl e shall be subjected to radiation hardness assured tests as specified in mil-prf-38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as s pecified in mil-prf-38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end-point electr ical parameter limits as defined in table i at t a = +25 c 5 c, after exposure, to the subgroups specified in table ii herein. c. when specified in the purchase or der or contract, a copy of the rha delta limits shall be supplied. 4.5 methods of inspection . methods of inspection s hall be specified as follows: 4.5.1 voltage and current . unless otherwise specified, all voltages given ar e referenced to the microcircuit gnd terminal. currents given are conventional current and positiv e when flowing into the referenced terminal. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for gove rnment microcircuit applications (original equipment), design applic ations, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will repl ace the same generic device covered by a contractor- prepared specification or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices.
standard microcircuit drawing size a 84072 defense supply center columbus columbus, ohio 43216-5000 revision level f sheet 16 dscc form 2234 apr 97 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform defens e supply center columbus when a system application requires configuration control and which smd's are applicable to t hat system. dscc will maintain a record of users and this li st will be used for coordination and distribution of changes to the dr awings. users of drawings covering microelectronic devices (fsc 5962) should contact dscc-va, telephone (614) 692-0544. 6.4 comments . comments on this drawing should be directed to dscc-va , columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for cl ass m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawi ng and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
standard microcircuit drawing source approval bulletin date: 02-02-08 approved sources of supply for smd 84072 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revisi on. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors lis ted below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc- va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 8407201ra 01295 snj54hc373j cd54hc373f3a 8407201sa 01295 snj54hc373w 8407201xa f8859 54hc373k02q 8407201xc f8859 54hc373k01q 84072012a 01295 snj54hc373fk 5962-8407201vsa 3 / 5962-8407201vxa f8859 54hc373k02v 5962-8407201vxc f8859 54hc373k01v 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / not available from an approved source of supply. vendor cage vendor name number and address 01295 texas instruments incorporated 13500 n. central expressway p.o. box 655303 dallas, tx 75265 point of contact: 6412 highway 75 south sherman, tx 75090-0084 f8859 stmicroelectronics 3 rue de suisse bp4199 35041 rennes cedex2-france the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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